Solvent-Assisted Thermal-Pressure Strategy for Constructing High-Quality CH3NH3PbI3-xClx Films as High-Performance Perovskite Photodetectors

High-quality CH3NH3PbI3-xClx films have attracted research interests in photoelectric devices because of their improved carrier diffusion length and charge mobility. Herein, a solvent-assisted thermal-pressure strategy is developed to promote the secondary growth of perovskite grains in the films. Highly oriented perovskite films are then obtained with large sized grains (5-10 mu m). As a consequence, the photodetectors based on the high-quality CH3NH3PbI3-xClx films exhibit enhanced ophtoelectrical performance, including high on/off ratio (>2.1 x 10(4)), fast response time (54/63 mu s), and high detectivity (similar to 1.3 x 10(12)). This work suggests an effective approach for high-quality perovskite films, which will be promising candidates for other high-efficiency photoelectric devices.