Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 21, Pages 18073-18081Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b03194
Keywords
tin sulfide; chemical vapor deposition; 2D materials; photodetector
Funding
- Ministry of Science and Technology of China [2016YFA0200800, 2016YFA0200400]
- National Natural Science Foundation of China [11674387, 1170041373, 11704402, 61390503, 11574385, 11574368]
- Key Research Program of Frontier Sciences of CAS [QYZDJ-SSW-SLH042]
- Strategic Priority Research Program of CAS [XDB07020200]
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Photodetection based on two-dimensional (2D) SnS2 has attracted growing interest due to its superiority in response rate and responsivity, but high-quality growth and high performance photo detection of 2D SnS2 still face great challenges. Here, high-quality SnS2 nanoflakes with large-size and high-production are vertically grown on an Si substrate by a modified CVD method, having an average size of 30 mu m with different thicknesses. Then a single SnS2 nanoflake-based photo transistor was fabricated to obtain a high current on/off ratio of 10(7) and excellent performance in photodetection, including fast response rates, low dark current, and high responsivity and detectivity. Specifically, the SnS2 nanoflakes show thickness-dependent photodetection capability, and a highest responsivity of 354.4 A W-1 is obtained at the average thickness of 100.5 nm. A sensitized process using an HfO2 nanolayer can further enhance the responsivity up to 1922 A W-1. Our work provides an efficient path to select SnS2 crystal samples with the optimal thickness as promising candidates for high-performance optoelectronic applications.
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