4.8 Article

Tip-Enhanced Photoinduced Electron Transfer and Ionization on Vertical Silicon Nanowires

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 17, Pages 14389-14398

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b00506

Keywords

photoinduced electron transfer; mass spectrometry; silicon nanowires; tip-enhanced; tip-contact sampling

Funding

  1. National Natural Science Foundation of China (NSFC) [21275218, 21575127]
  2. Ministry of Education of China [20130101110048]
  3. Natural Science Foundation of Zhejiang Province [Y18H160118]
  4. NSFC [61575176]

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Nanostructured semiconductors are one of the most potent candidates for matrix-free laser desorption/ionization mass spectrometric (LDI-MS) analysis of low-molecular-weight molecules. Herein, the enhanced photoinduced electron transfer and LDI on the tip of a vertical silicon nanowire (SiNW) array were investigated. Theoretical simulation and LDI detection of indigo and isatin molecules in negative ion mode revealed that the electric field can be enhanced on the tip end of SiNWs, thereby promoting the energy and electron transfer to the analytes adsorbed on the tip of SiNWs. On the basis of this finding, a tip contact sampling method coupled with LDI-MS detection was established. In this strategy, the tip of SiNWs can be regarded as microextraction heads for the sampling of molecules when they come in contact with analytes. Impression of skin, tissue, and pericarp on the vertical SiNW array can effectively transfer endogenous metabolites or exogenous substances onto the tip. Upon laser irradiation, the adsorbed molecules on the SiNW tip can be efficiently ionized and detected in negative ion mode because of the tip-enhanced electron transfer and LDI effect. We believe this work may significantly expand the application of LDI-MS in various fields.

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