Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 16, Pages 13895-13902Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b03953
Keywords
gas-sensing modes; inorganic semiconductors; carrier mobility; room temperature; nanorod arrays
Funding
- European Research Council (ThreeDsurface) [240144]
- European Research Council (HiNaPc) [737616]
- Federal Ministry of Education and Research in Germany (BMBF, ZIK-3DNanoDevice) [03Z1MN11]
- German Research Foundation [DFG: LE 2249_4-1]
- China Scholarship Council
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Adsorption-induced change of carrier density is presently dominating inorganic semiconductor gas sensing, which is usually operated at a high temperature. Besides carrier density, other carrier characteristics might also play a critical role in gas sensing. Here, we show that carrier mobility can be an efficient parameter to dominate gas sensing, by which room-temperature gas sensing of inorganic semiconductors is realized via a carrier mobility-dominated gas-sensing (CMDGS) mode. To demonstrate CMDGS, we design and prepare a gas sensor based on a regular array of SnO2 nanorods on a bottom film. It is found that the key for determining the gas-sensing mode is adjusting the length of the arrayed nanorods. With the change in the nanorod length from 340 to 40 nm, the gas-sensing behavior changes from the conventional carrier-density mode to a complete carrier-mobility mode. Moreover, compared to the carrier density-dominating gas sensing, the proposed CMDGS mode enhances the sensor sensitivity. CMDGS proves to be an emerging gas-sensing mode for designing inorganic semiconductor gas sensors with high performances at room temperature.
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