Journal
BULLETIN OF THE KOREAN CHEMICAL SOCIETY
Volume 38, Issue 7, Pages 696-699Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/bkcs.11153
Keywords
Zinc sulfide; Atomic layer deposition; Thin film; Diethylzinc; 1,5-Pentanedithiol
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) [2014R1A1A2055812]
- Korea Institute of Energy Technology Evaluation and Planning (KETEP) [20153030013060]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10063277]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10063277, 20153030013060] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2014R1A1A2055812] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This study describes a novel chemical route to grow ZnS thin films via atomic layer deposition (ALD). By using diethylzinc and 1,5-pentanedithiol as precursors of Zn and S, respectively, ZnS films are grown on substrates with an atomic precision by repeating self-limiting chemisorption of each precursor. The growth-per-cycle of the ALD process is around 0.1 angstrom per cycle at 150 degrees C, and the as-grown films are characterized to be amorphous ZnS by X-ray diffraction and X-ray photoelectron spectroscopy.
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