Journal
JOURNAL OF SEMICONDUCTORS
Volume 37, Issue 11, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-4926/37/11/111001
Keywords
green LDs; InGaN; QCSE; In-rich
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Funding
- National Key Research and Development Progress of China [2016YFB0401803, 2016YFB0402002]
- National Natural Science Foundation of China [61574160, 61334005]
- Strategic Priority Research Program of the Chinese Academy of Science [XDA09020401]
- Science and Technology Support Project of Jiangsu Province [BE2013007]
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Recently, many groups have focused on the development of GaN-based green LDs to meet the demand for laser display. Great progresses have been achieved in the past few years even that many challenges exist. In this article, we analysis the challenges to develop GaN-based green LDs, and then the approaches to improve the green LD structure in the aspect of crystalline quality, electrical properties, and epitaxial layer structure are reviewed, especially the work we have done.
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