Journal
ACS ENERGY LETTERS
Volume 2, Issue 4, Pages 915-921Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.7b00197
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Funding
- Fundamental Research Funds for the Central Universities (USTB)
- National Natural Science Foundation of China [51602022, 61674013, 11374332]
- Chinese Academy of Sciences [KGZD-EW-T06]
- Shanghai government [15JC1400301]
- National Key R&D Program of China [2016YFA0201103]
- Japanese Society for the Promotion of Science [P15363]
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Localized refrigeration and power generation via thermoelectric technology rely on efficient thermoelectric materials with high performance at room temperature. Although the two-dimensional electron gas (2DEG)-related materials exhibit ultrahigh thermoelectric performance near room temperature, such performance is only preserved at thicknesses within subnanometer scales, limited by the requirement of two-dimensional size confinements. Here we report ultrahigh thermoelectric performance similar to 2DEG-related materials but achieved in SrNb0.2Ti0.8O3 oxide films with a submicrometer-scale thickness by regulating strain induced lattice polarizations and interfacial polarizations. A large figure of merit, zT, and power factor (similar to 10(2)-10(3) mu W cm(-1) K-2) were achieved near room temperature, and the maximum zT is estimated to be similar to 1.6 for a 49 nm thick film. These performances exceed those of the existing n-type thermoelectric materials for room-temperature uses and the reported best oxide materials beyond subnanometer scales. The earth-abundant elemental composition of the oxide film paves the way toward potential applications in thermoelectric thin film devices with a microscale thickness.
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