4.6 Article

Photoinduced magnetization effect in a p-type Hg1-xMnxTe single crystal investigated by infrared photoluminescence

Journal

PHYSICAL REVIEW B
Volume 94, Issue 15, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.94.155201

Keywords

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Funding

  1. Ministry of Science and Technology 973 Program [2013CB922301, 2014CB643901]
  2. Shanghai Committee of Science and Technology [14YF1404100, 13ZR1453700]
  3. RFDP [01405286]
  4. National Natural Science Foundation of China [61604056, 61176075, 61306119]

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Photoinduced magnetization (PIM) effect of Hg1-xMnxTe provides an attractive solution for realizing the quantum anomalous Hall effect in quantum wells with a light field. In this paper, the PIM effect of p-type Hg0.74Mn0.26Te single crystal was investigated by power-, polarization- and temperature-dependent photoluminescence (PL) measurements in both reflection and transmission geometries. Giant Zeeman splitting and polarization of PL spectra were observed without an external magnetic field evolving with excitation-power density of the pumping laser and temperature, which were accounted for by the PIM effect. The occurrence of the PIM was qualitatively understandable by the carrier-mediated mean-field theory known as the Zener model. The results indicate that infrared PL measurements with enhanced sensitivity and signal-to-noise ratio can serve as a convenient pathway for clarifying the PIM effect of semimagnetic semiconductors.

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