Journal
APL MATERIALS
Volume 4, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4962145
Keywords
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Funding
- DGIST R&D Programs of the Ministry of Science ICT and Future Planning of Korea [16-BD-05]
- Ministry of Science, ICT & Future Planning, Republic of Korea [16-BD-05] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this work, transparent conducting oxides (TCOs) have been employed as a back contact instead of Mo on Cu2ZnSnSe4 (CZTSe) thin-film solar cells in order to examine the feasibility of bifacial Cu2ZnSn(S, Se)(4) (CZTSSe) solar cells based on a vacuum process. It is found that the interfacial reaction between flourine doped tin oxide (FTO) or indium tin oxide (ITO) and the CZTSe precursor is at odds with the conventional CZTSe/Mo reaction. While there is no interfacial reaction on CZTSe/FTO, indium in CZTSe/ITO was significantly diffused into the CZTSe layers; consequently, a SnO2 layer was formed on the ITO substrate. Under bifacial illumination, we achieved a power efficiency of 6.05% and 4.31% for CZTSe/FTO and CZTSe/ITO, respectively. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
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