Journal
MATERIALS & DESIGN
Volume 122, Issue -, Pages 220-225Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.matdes.2017.02.085
Keywords
Low dimensional dichalcogenide compounds; X-ray photoelectron spectroscopy; Optical and electrical bandgaps
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Funding
- Iranian Elites foundation
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We report on the MoS2 and MoOx (x = 2 and 3) composite thin layers, electrodeposited, onto a Florine doped Tin Oxide (FTO) substrate. Our results show a change in relative content of these compounds in different thicknesses ranging from similar to 20 to 540 nm. This change in the relative content at different thicknesses leads to a change in optical and electrical properties including bandgap and the type of semiconductivity. A sharp transition from p to n-type of semiconductivity is observed by scanning tunneling spectroscopy measurements. We find that the spin-orbit interaction of Mo 3d electrons in the MoS2 and MoO3 enhances by significant reduction of the MoO3 content in thicker layers. (C) 2017 Elsevier Ltd. All rights reserved.
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