Journal
NPJ QUANTUM INFORMATION
Volume 3, Issue -, Pages -Publisher
SPRINGERNATURE
DOI: 10.1038/s41534-016-0003-1
Keywords
-
Categories
Funding
- United States Department of Defense
- Office of the Director of National Intelligence, Intelligence Advanced Research Projects Activity
- Army Research Office [W911NF-11-1-0068]
- Department of Defense through the National Defense Science Engineering Graduate Fellowship Program
- National Science Foundation [ECS0335765]
Ask authors/readers for more resources
Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 109 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking, we measure single-qubit gate fidelities of similar to 99%, and through self-consistent quantum measurement, state, and process tomography, we measure an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available