Journal
SCIENCE BULLETIN
Volume 62, Issue 15, Pages 1074-1080Publisher
ELSEVIER
DOI: 10.1016/j.scib.2017.07.005
Keywords
Single-crystal; Industrial Cu; Graphene; Ultrafast; Epitaxial
Categories
Funding
- National Key R&D Program of China [2016YFA0300903, 2016YFA0300802, 2014CB932500, 2016YFA0200101]
- National Natural Science Foundation of China [51522201, 11474006, 11327902, 11234001, 21525310, 91433102, 21573186]
- Postdoctoral Innovative Personnel Support Program [BX201700014]
- National Program for Thousand Young Talents of China and the Institute for Basic Science of Korea [IBS-R019-D1]
- Ministry of Science & ICT (MSIT), Republic of Korea [IBS-R019-D1-2017-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A foundation of the modern technology that uses single-crystal silicon has been the growth of highquality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 min, of a graphene film of (5 x 50) cm(2) dimension with >99% ultra-highly oriented grains. This growth was achieved by: (1) synthesis of metre-sized single-crystal Cu(1 1 1) foil as substrate; (2) epitaxial growth of graphene islands on the Cu(1 1 1) surface; (3) seamless merging of such graphene islands into a graphene film with high single crystallinity and (4) the ultrafast growth of graphene film. These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(1 1 1) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to similar to 23,000 cm(2) V-1 s(-1) at 4 K and room temperature sheet resistance of similar to 230 Omega/rectangle. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost. (C)2017 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
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