Parameters optimization of CIGS solar cell using 2D physical modeling

In this study, the CIGS thin film solar cell has been investigated using the two-dimensional device simulator Silvaco-Atlas. Thickness and carrier concentration effects of the cell structure were studied to optimize the solar cell performances. Our results revealed high efficiency for a cell structure of 0.15 mm ZnO: Al, 0.06 mu m i-ZnO, 0.04 mu m CdS and 3 mu m CIGS. The carrier concentration effects of the different layers were also studied revealing a better performance for CIGS doping concentration of 10(-18) cm(-3). The optimized CIGS solar cell characteristics were a current density of short circuit J(sc) = 38.75 mA/cm(2), an opencircuit voltage V-0C = 804.03 mV, a fill factor FF = 74.48% and an efficiency eta = 23.20%. This result is in good agreement with experimental efficiencies found in literature. (C) 2017 Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license.