Correlation between dynamic RDSon transients and Carbon related buffer traps in AlGaN/GaN HEMTs

The on resistance increment observed when the device is operated at high drain-source voltages is one the topics that limits the performance of the AlGaN/GaN HEMT devices. In this paper, the physical mechanisms responsible of the R-DSon degradation are investigated. The dynamic R-DSon transient method is used in order to get insight to characterize the traps states. By calculating the Arrhenius plot associated with the R-DSon transients an activation energy of 0.86eV was extracted, that can be correlated to the traps due to the incorporation of Carbon inside the buffer. This hypothesis was further supported by the analyses performed on a simpler structure (TLM). By applying a negative substrate bias the effect of only the buffer traps was studied. A fairly close value of the activation energy (0.9eV) to the one extracted when analyzing the R-DSon transient was obtained.