Journal
RESULTS IN PHYSICS
Volume 7, Issue -, Pages 4096-4100Publisher
ELSEVIER
DOI: 10.1016/j.rinp.2017.10.033
Keywords
MoSe2; Anisotropic; Layered semiconductors; Raman scattering
Funding
- Ministry of Science and Technology [MOST 103-2633-E-236-001]
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We present the anisotropic Raman spectra of the Re-doped MoSe2 layered semiconductor with thicker edge plane grown by chemical vapor transport method. The anisotropic lattice dynamics in the doped MoSe2 layered material are investigated by Raman scattering. The vibrational spectra measured on the planes perpendicular and parallel to the crystal c-axis can be correlated, respectively, to the Raman active E-1g, A(1g) and E-2g(1) modes. The linewidth parameter Gamma and correlation length L evaluated using spatial correlation model for describing the Raman spectra lineshape are further discussed to understand the in-plane and out-of-plane vibration of the Se atoms in the E-1g and A(1g) modes. (C) 2017 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license.
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