Journal
MATERIALS RESEARCH EXPRESS
Volume 4, Issue 6, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1591/aa7368
Keywords
gamma-Bi2O3; phase transformation; semiconductor; photocatalytic degradation
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Funding
- National Natural Science Foundation of China [21573101]
- Liaoning Province [[2015]153]
- Liaoning BaiQianWan Talents program [[2017]96]
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Stable gamma-Bi2O3 was successfully prepared through the introduction of a surfactant (PEG6000, PEG20000, PVP-K30, CTAB, Tetraethylammonium hydroxide) in a facile solution crystallization method at low temperature. XRD and SEM were used to characterize the phase transformation and morphology of the Bi2O3 samples. It is found that the surfactant used in this study plays a key role in stabilizing gamma-Bi2O3 by prohibiting the transition from gamma-Bi2O3 to alpha-Bi2O3 as the reaction time increases. Moreover, these above surfactants have no obvious effect on the particle size and morphology of gamma-Bi2O3. Photocatalytic degradation of RhB results show that stable gamma-Bi2O3 has a higher photocatalytic activity than alpha-Bi2O3.
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