Journal
MATERIALS RESEARCH EXPRESS
Volume 4, Issue 8, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/2053-1591/aa7fe4
Keywords
GaN; flexible semiconductor; MBE
Categories
Funding
- FRC-UASLP
- Consejo Nacional de Ciencia y Tecnologia (CONACyT)-Mexico [237099, 225146, CEMIE-Sol 22]
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GaN thin films were grown on flexible metallic substrates by molecular beam epitaxy. MgO buffer layers were deposited by spin coating on Ni-Mo-Cr (Hastelloy C-276) alloy tapes that were used as substrates. The structural characterization of the GaN/MgO/hastelloy samples was performed by x-ray diffraction and Raman spectroscopy. The obtained nanometric films have the stable hexagonal phase (alpha-GaN) with an average crystallite size of 18 nm. The long and short range order of GaN decrease when the structure is bent. The most significant variations in the structural properties occur between 100 and 250 bending cycles.
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