Journal
MATERIALS RESEARCH EXPRESS
Volume 4, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1591/aa7f59
Keywords
evaporation; XPS; In2O3; thin films; PL
Categories
Funding
- National Research Foundation of Korea (NRF) grants - Korean government (MSIP) [2015R1A2A2A01003741, 2017R1A4A1015581]
- National Research Foundation of Korea (NRF) grant - Korean government [NRF-2016M2B2A9A02945310]
- National Research Council of Science & Technology (NST), Republic of Korea [EO170020] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2016M2B2A9A02945310, 2015R1A2A2A01003741] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The nanostructured In2O3 thin films were deposited on Si n-type (100) substrates by reactive thermal evaporation. The structural, morphological, and oxidation states of the films were investigated using x-ray diffraction, scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. The optical properties of the films were analyzed by UV-vis spectroscopy, Raman spectroscopy, and photoluminescence spectroscopy. The deposited films showed c-In2O3 crystalline nanostructures with a preferred diffraction peak of (222). The truncated icosahedron shape's morphology with a transmittance of 85% was observed in the In2O3 thin films. All the deposited indium oxide films have 3+ oxidation states.
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