Journal
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9
Volume 13, Issue 7-9, Pages 651-655Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssc.201510259
Keywords
HgCdTe (MCT); molecular-beam epitaxy (MBE); doping; heterostructure; photodiode; infrared photodetector; high operating temperature; dark current
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Electrophysical properties of multilayered heteroepitaxial structures of Hg1-xCdxTe with x=0.3-0.4 grown by molecular beam epitaxy on silicon substrates are presented. The passivating effect of thin CdTe layers grown on top of the structures in single process is demonstrated. Comparison between experimental and theoretical temperature dependencies of reverse currents in n-on-p and p-on-n diodes fabricated by boron and arsenic ion implantation in vacancy-doped p-type and In-doped n-type Hg1-xCdxTe films, respectively, are presented. The influence of p-n junction position in double-layer heterostructure on temperature dependencies of reverse currents is examined. (C) 2016 WILEY-VCH Verlag GmbH & Co.
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