Journal
JOURNAL OF ADVANCED CERAMICS
Volume 6, Issue 1, Pages 27-32Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s40145-016-0213-1
Keywords
oxidation mechanism; aluminum nitride; diffusion; reaction
Categories
Funding
- Ministry of Science and Technology [NSC100-3113-E-002-001]
Ask authors/readers for more resources
Different from the oxidation kinetics of other nitrides, the oxide layer on AlN can easily reach tens of micrometers at a temperature above 1200 A degrees C. In the present study, the oxidation mechanism of AlN is investigated through microstructure observation. The analysis indicates that the oxide layer is full of small pores. The formation of pores generates additional surface area to induce further reaction. The reaction thus controls the oxidation in the temperature range from 1050 to 1350 A degrees C. The oxidation rate becomes slow as the oxide layer reaches a critical thickness.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available