High-performance self-powered perovskite photodetector with a rapid photoconductive response

Here we report the development of a self-powered high-speed perovskite Schottky junction photodiode, which is very important for next-generation electronic devices. The ITO/perovskite Schottky junction diode yielded a rectification behaviour with a low value of reverse saturation current under dark conditions, and a zero bias photocurrent when illuminated. The fabricated photodiode exhibited a high photosensitivity with fast response and recovery times. The origin of the high photocurrent in the fabricated photodiode was analysed by making a log-linear plot of its current-voltage characteristics. The study also demonstrated the efficient charge transport properties of the CH(3)NH(3)Pbl(3) semiconductor material with the photogenerated electrons injected into the ITO contact and the holes injected into the gold contact. The obtained results provide a way to fabricate an efficient self-bias photodiode for future electronic devices.