Journal
2016 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI (ISVLSI)
Volume -, Issue -, Pages 105-109Publisher
IEEE
DOI: 10.1109/ISVLSI.2016.52
Keywords
Indium Antimonide; hetero gate dielectric; verilog-A model; heterojunction tunnel field effect transistor; double gate
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In this work, an InSb/Si heterojunction hetero gate dielectric double gate TFET (HTFET) having a split pocket at Source-Channel junction has been designed and its analog/RF performance has been investigated. The analog/RF performance of the device is analysed in terms of I-V characteristics, transconsuctance (g(m)), parasitic capacitances, cut-off frequency (f(T)) and gain bandwidth product (GBW). Maximum f(T) of 777.8 GHz, maximum GBW of 393 GHz and a I-ON/I-OFF ratio of 10(10) were obtained from the simulations carried out. Further, circuit level performance analysis is performed by implementing a common source (CS) amplifier based on HTFET, using look-up table based Verilog-A model; a 3-dB roll-off frequency of 55.0981 GHz and unity gain cut-off frequency of 1.4652 THz were achieved.
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