Related references
Note: Only part of the references are listed.Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds
M. Bockowski et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates
R. Kucharski et al.
JOURNAL OF CRYSTAL GROWTH (2015)
Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals
S. Pimputkar et al.
JOURNAL OF CRYSTAL GROWTH (2015)
Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation
Hiroshi Amano
REVIEWS OF MODERN PHYSICS (2015)
Pseudo-square AlGaN/GaN quantum wells for terahertz absorption
M. Beeler et al.
APPLIED PHYSICS LETTERS (2014)
Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm-3
Martin Feneberg et al.
PHYSICAL REVIEW B (2014)
InGaN laser diodes with reduced AlGaN cladding thickness fabricated on GaN plasmonic substrate
S. Stanczyk et al.
APPLIED PHYSICS LETTERS (2013)
Fourier transform infrared spectroscopy in physics laboratory courses
K-P Moellmann et al.
EUROPEAN JOURNAL OF PHYSICS (2013)
Transparency of GaN substrates in the mid-infrared spectral range
M. Welna et al.
CRYSTAL RESEARCH AND TECHNOLOGY (2012)
Terahertz intersubband absorption in GaN/AlGaN step quantum wells
H. Machhadani et al.
APPLIED PHYSICS LETTERS (2010)
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
A. El Fatimy et al.
JOURNAL OF APPLIED PHYSICS (2010)
Intersubband optics in GaN-based nanostructures - physics and applications
M. Tchernycheva et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2010)
Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths
Grzegorz Cywinski et al.
APPLIED PHYSICS EXPRESS (2009)
Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates
P. K. Kandaswamy et al.
APPLIED PHYSICS LETTERS (2009)
Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy
J. Ibanez et al.
JOURNAL OF APPLIED PHYSICS (2008)
Excellent crystallinity of truly bulk ammonothermal GaN
R. Dwilinski et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Photon absorption in the Restrahlen band of thin films of GaN and AlN: Two phonon effects
JY Yang et al.
JOURNAL OF APPLIED PHYSICS (2005)
Band parameters for nitrogen-containing semiconductors
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2003)
Substrates for gallium nitride epitaxy
L Liu et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2002)
Infrared studies on GaN single crystals and homoepitaxial layers
E Frayssinet et al.
JOURNAL OF CRYSTAL GROWTH (2000)