Journal
APL MATERIALS
Volume 5, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4979090
Keywords
-
Funding
- European Research Council through ERC [681379]
- European Union through the program Graphene Core1-Graphene-based disruptive technologies [696656]
Ask authors/readers for more resources
The discovery of graphene triggered a rapid rise of unexplored two-dimensional materials and heterostructures having optoelectronic and photonics properties that can be tailored on the nanoscale. Among these materials, black phosphorus (BP) has attracted a remarkable interest, thanks to many favorable properties, such as the high carrier mobility, the in-plane anisotropy, the possibility to alter its transport via electrical gating, and the direct band-gap, which can be tuned by thickness from 0.3 eV (bulk crystalline) to 1.7 eV (single atomic layer). When integrated in a microscopic field effect transistor, a few-layer BP flake can detect Terahertz (THz) frequency radiation. Remarkably, the in-plane crystalline anisotropy can be exploited to tailor the mechanisms that dominate the photoresponse; a BP-based field effect transistor can be engineered to act as a plasma-wave rectifier, a thermoelectric sensor, or a thermal bolometer. Here we present a review on recent research on BP detectors operating from 0.26 THz to 3.4 THz with particular emphasis on the underlying physical mechanisms and the future challenges that are yet to be addressed for making BP the active core of stable and reliable optical and electronic technologies. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available