Related references
Note: Only part of the references are listed.Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering
Kohei Ueno et al.
APPLIED PHYSICS EXPRESS (2017)
Electrical properties of Si-doped GaN prepared using pulsed sputtering
Yasuaki Arakawa et al.
APPLIED PHYSICS LETTERS (2017)
Hybrid tunnel junction contacts to III-nitride light-emitting diodes
Erin C. Young et al.
APPLIED PHYSICS EXPRESS (2016)
Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications
N. G. Young et al.
JOURNAL OF CRYSTAL GROWTH (2016)
Ge doping of GaN beyond the Mott transition
A. Ajay et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
n-Type doped transparent conducting binary oxides: an overview
Sebastian C. Dixon et al.
JOURNAL OF MATERIALS CHEMISTRY C (2016)
High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering
Yasuaki Arakawa et al.
APL MATERIALS (2016)
n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts
L. Lugani et al.
APPLIED PHYSICS LETTERS (2014)
AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering
T. Watanabe et al.
APPLIED PHYSICS LETTERS (2014)
Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique
Eiji Nakamura et al.
APPLIED PHYSICS LETTERS (2014)
Effect of growth stoichiometry on the structural properties of AlN films on thermally nitrided sapphire (1120)
Kohei Ueno et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2014)
Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering
Jeong Woo Shon et al.
SCIENTIFIC REPORTS (2014)
Anisotropy of effective electron masses in highly doped nonpolar GaN
Martin Feneberg et al.
APPLIED PHYSICS LETTERS (2013)
Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy
Faiza Afroz Faria et al.
APPLIED PHYSICS LETTERS (2012)
High Si and Ge n-type doping of GaN doping - Limits and impact on stress
S. Fritze et al.
APPLIED PHYSICS LETTERS (2012)
Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition
Kazuhiro Sato et al.
APPLIED PHYSICS EXPRESS (2009)
Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors (vol 78, art no 035207 2008)
S. Shokhovets et al.
PHYSICAL REVIEW B (2008)
n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy
PR Hageman et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Heavily silicon-doped GaN by MOVPE
I Halidou et al.
MICROELECTRONICS JOURNAL (2001)
Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN
DC Look et al.
SOLID STATE COMMUNICATIONS (2001)
Share Paper
