Journal
ADVANCED SCIENCE
Volume 5, Issue 1, Pages -Publisher
WILEY
DOI: 10.1002/advs.201700334
Keywords
graphene nanodots arrays; lithography; photodetectors; ZnO
Categories
Funding
- National Natural Science Foundation of China [61528402, 11674061, 51471051]
- Science and Technology Commission of Shanghai Municipality [15520720700]
- Shanghai Shu Guang Project [12SG01]
- Programs for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
- Shanghai Sailing Program [17YF1412700]
- Young Teachers in Shanghai Colleges and Universities [ZZslg16062]
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Graphene nanodots (GNDs) are one of the most attractive graphene nanostructures due to their tunable optoelectronic properties. Fabricated by polystyrene-nanosphere lithography, uniformly sized graphene nanodots array (GNDA) is constructed as an ultraviolet photodetector (PD) with ZnO nanofilm spin coated on it. The size of GNDA can be well controlled from 45 to 20 nm varying the etching time. It is revealed in the study that the photoelectric properties of ZnO/GNDA PD are highly GNDA size-dependent. The highest responsivity (R) and external quantum efficiency of ZnO/GNDA (20 nm) PD are 22.55 mA W-1 and 9.32%, almost twofold of that of ZnO PD. Both ZnO/GNDA (20 nm) PD and ZnO/GNDA (30 nm) PD exhibit much faster response speed under on/off switching light and have shorter rise/decay time compared with ZnO PD. However, as the size of GNDA increase to 45 nm, the PD appears poor performance. The size-dependent phenomenon can be explained by the energy band alignments in ZnO/GNDA hybrids. These efforts reveal the enhancement of GNDs on traditional photodetectors with tunable optoelectronic properties and hold great potential to pave a new way to explore the various remarkable photodetection performances by controlling the size of the nanostructures.
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