Journal
ADVANCED ELECTRONIC MATERIALS
Volume 3, Issue 12, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201700298
Keywords
copper iodide; high mobility; transparent flexible electronics; transparent p-n diode; transparent p-type semiconductor
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Transparent p-type CuI layers with high hole mobility can be fabricated on flexible plastic sheets, a system which has been unattainable with p-type transparent oxide semiconductors. Mildly heat-treated CuI layers have mobilities of approximate to 20 cm(2) V-1 s(-1), which are comparable to those of p-type GaN epilayers. Highly transparent p-n diodes with sufficient rectification ratio (10(6)) can be manufactured by employing a heterojunction of p-type CuI and amorphous n-type In-Ga-Zn-O layers on plastic sheets. Thus, CuI can be regarded as an excellent transparent p-type semiconductor for flexible transparent electronics.
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