High-Mobility Transparent p-Type CuI Semiconducting Layers Fabricated on Flexible Plastic Sheets: Toward Flexible Transparent Electronics

Transparent p-type CuI layers with high hole mobility can be fabricated on flexible plastic sheets, a system which has been unattainable with p-type transparent oxide semiconductors. Mildly heat-treated CuI layers have mobilities of approximate to 20 cm(2) V-1 s(-1), which are comparable to those of p-type GaN epilayers. Highly transparent p-n diodes with sufficient rectification ratio (10(6)) can be manufactured by employing a heterojunction of p-type CuI and amorphous n-type In-Ga-Zn-O layers on plastic sheets. Thus, CuI can be regarded as an excellent transparent p-type semiconductor for flexible transparent electronics.