Journal
ADVANCED ELECTRONIC MATERIALS
Volume 3, Issue 8, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201600195
Keywords
GRM; graphene; non-volatile memory; RRAM; resistive switching
Funding
- Young 1000 Global Talent Recruitment Program of the Ministry of Education of China
- National Natural Science Foundation of China [61502326, 41550110223, 61521064, 61322408, 61422407]
- Jiangsu Government [BK20150343]
- Ministry of Finance of China [SX21400213]
- Young 973 National Program of the Chinese Ministry of Science and Technology [2015CB932700]
- Collaborative Innovation Center of Suzhou Nano Science Technology
- Jiangsu Key Laboratory for Carbon-Based Functional Materials Devices
- Priority Academic Program Development of Jiangsu Higher Education Institutions
- Beijing Training Project for the Leading Talents in ST [ljrc201508]
- Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology
- Institute of Microelectronics
- Chinese Academy of Sciences
- EU Graphene Flagship
- CARERAMM
- EPSRC [EP/K01711X/1, EP/K017144/1, EP/N010345/1, EP/L016087/1]
- ERC Grant Hetero2D
- ERC Grant Highgraink
- EPSRC [EP/K01711X/1, EP/K017144/1, EP/N010345/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/K017144/1, EP/K01711X/1, EP/N010345/1] Funding Source: researchfish
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Graphene and related materials (GRMs) are promising candidates for the fabrication of resistive random access memories (RRAMs). Here, this emerging field is analyzed, classified, and evaluated, and the performance of a number of RRAM prototypes using GRMs is summarized. Graphene oxide, amorphous carbon films, transition metal dichalcogenides, hexagonal boron nitride and black phosphorous can be used as resistive switching media, in which the switching can be governed either by the migration of intrinsic species or penetration of metallic ions from adjacent layers. Graphene can be used as an electrode to provide flexibility and transparency, as well as an interface layer between the electrode and dielectric to block atomic diffusion, reduce power consumption, suppress surface effects, limit the number of conductive filaments in the dielectric, and improve device integration. GRM-based RRAMs fit some non-volatile memory technological requirements, such as low operating voltages (<1V) and switching times (<10 ns), but others, like retention >10 years, endurance >10(9) cycles and power consumption approximate to 10 pJ per transition still remain a challenge. More technology-oriented studies including reliability and variability analyses may lead to the development of GRMs-based RRAMs with realistic possibilities of commercialization.
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