Journal
ADVANCED ELECTRONIC MATERIALS
Volume 3, Issue 11, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201700078
Keywords
azaisoindigo; field-effect transistors; heteroatom effect; polymeric semiconductors
Funding
- National Natural Science Foundation of China [21673258, 51473021, 21474116, 51233006]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDB12030100]
- National Key Research and Development Program of China [2016YFB0401100]
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To establish a structure-property relationship between polymer backbone structures and field-effect transistor performance has emerged as a new topic in organic electronics. The tunability and diversity of organic semiconductors provide the feasibility of controlling the electrical properties. Herein the characterization of thienothiophene-, dithiophenylethene-, biselenophene-, and diselenophenylethene-containing azaisoindigo copolymers is presented. As suggested by both theoretical calculations and experimental results, backbone electronic structure and linearity, density of side chains, aggregation, and thin film microstructure are involved in the differences in optical and electrical properties of these polymers. As the conjugation lengthens, n-type behaviors of the polymer semiconductors are suppressed, leading to a variation from nearly balanced ambipolar behaviors to predominant p-type characteristics. The effect of heteroatom substitution is also investigated. Notably, high hole and electron mobilities of 1.14 and 1.54 cm(2) V-1 s(-1) extracted from approximately ideal I-V curves are achieved with the top-gate/bottom-contact configuration transistors, demonstrating the potential of 7,7-diazaisoindigo-based semiconducting polymers for applications in organic electronics.
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