Journal
ADVANCED ELECTRONIC MATERIALS
Volume 3, Issue 12, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201700263
Keywords
HfOx; RESET; RRAM; sub-nanosecond electronics
Funding
- National Key Research and Development Program of China [2016YFA0201801]
- Beijing Advanced Innovation Center for Future Chip (ICFC)
- NSFC [61674089, 61674087, 61076115, 61674092]
- Fundamental Research Funds for the Central Universities [DUT17RC(3)020]
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Ultrafast switching is an attractive performance for resistive random access memory (RRAM) as one of the next-generation nonvolatile memory options. A high-speed measurement setup is designed and constructed to characterize the RESET operation of HfOx-based RRAM device with sub-nanosecond pulse. The analysis of the RESET process is quantitatively performed by studying the relationship between resistance and pulse conditions. Experimental data show that stable resistive switching can be achieved by sub-nanosecond pulse on HfOx-based RRAM. A compact model is built based on high-speed RESET measurement results, and it is found that the oxygen ions migration driven by the electric field is the dominant factor during the sub-nanosecond pulse RESET process rather than thermal effect. It demonstrates HfOx-based RRAM has great potential on extremely high-speed memory applications.
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