4.6 Article

Bulk and domain-wall effects in ferroelectric photovoltaics

Journal

PHYSICAL REVIEW B
Volume 94, Issue 21, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.94.214111

Keywords

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Funding

  1. JSPS [14J04693]
  2. JSPS KAKENHI [26249094]
  3. Center for Integrated Nanotechnology at Tohoku University
  4. Nanotechnology Network Project of the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) of Japan
  5. Grants-in-Aid for Scientific Research [26249094, 14J04693] Funding Source: KAKEN

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We investigate the photovoltaic (PV) effects in ferroelectrics based on the polar structure in domains and the intrinsic symmetry breaking of ferroelastic domain walls (DWs). A comprehensive analysis for BiFeO3 films with the single-domain and 71 degrees domain structures reveals a major contribution of the DWs superimposed on the bulk PV effect, which can explain the enhanced PV response in the multidomain film exhibiting photovoltages greater than the band gap. Our methodology can reveal the contributions of the bulk PV and the DW-PV effects quantitatively and uncover a design strategy for enhancing ferroelectric photovoltaics.

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