Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 10(16) cm(-3), but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 10(16) cm(-3) hole density are achieved in singlecrystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. This combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development. (C) 2016 Author(s).