Journal
PHYSICAL REVIEW APPLIED
Volume 7, Issue 2, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.7.024023
Keywords
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Funding
- C-SPIN and FAME, two of six centers of STARnet, a Semiconductor Research Corporation program - MARCO
- DARPA
- National Science Foundation [ECCS 1611570]
- Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems [EEC-1160504]
- SHINES Center, an Energy Frontier Research Center - U.S. Department of Energy, Office of Science, Basic Energy Sciences [S000686]
- China Scholarship Council
- 973 Program [2014CB921104]
- National Natural Science Foundation of China [11474067]
- Science Foundation Ireland through AMBER
- [13/ERC/I2561]
- Direct For Mathematical & Physical Scien [1411085] Funding Source: National Science Foundation
- Division Of Materials Research [1411085] Funding Source: National Science Foundation
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Switching of magnetization via spin-orbit torque provides an efficient alternative for nonvolatile memory and logic devices. However, to achieve deterministic switching of perpendicular magnetization, an external magnetic field collinear with the current is usually required, which makes these devices inappropriate for practical applications. In this work, we examine the current-induced magnetization switching in a perpendicularly magnetized exchange-biased Pt/CoFe/IrMn system. A magnetic field annealing technique is used to introduce in-plane exchange biases, which are quantitatively characterized. Under proper conditions, field-free current-driven switching is achieved. We study the Joule heating effect, and we show how it can decrease the in-plane exchange bias and degrade the field-free switching. Furthermore, we discuss that the exchange-bias training effect can have similar effects.
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