Journal
NANO-MICRO LETTERS
Volume 10, Issue 2, Pages -Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s40820-017-0173-1
Keywords
Graphene; Silicon; Metal-free CVD; Domain growth
Funding
- National Natural Science Foundation of China (NSFC) [11405253, 11225527, 11575283, 11205235, U1632129, U1332205]
- Shanghai Science Foundation [14YF1407500]
- Youth Innovation Promotion Association CAS [2016237]
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The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates. [GRAPHICS]
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