Journal
PHYSICAL REVIEW B
Volume 94, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.94.241116
Keywords
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Funding
- State Key Program for Basic Research of China [2015CB921203]
- Natural Science Foundation of China [11374139, U1431112]
- ONR Grant [N00014-12-1-1034]
- NSF [0722625, 0959124, 0918970]
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-SC0012704]
- DoD
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Perovskite RAlO3 (R = La, Nd, Sm, and Gd) films have been deposited epitaxially on (001) TiO2-terminated SrTiO3 substrates. It is observed that the two-dimensional transport characteristics at the RAlO3/SrTiO3 interfaces are very sensitive to the species of rare-earth element, that is to chemical strain. Although electron energy loss spectroscopy measurements show that electron transfer occurs in all the four polar/nonpolar heterostructures, the amount of electrons transferred across SmAlO3/SrTiO3 and GdAlO3/SrTiO3 interfaces are much less than those across LaAlO3/SrTiO3 and NdAlO3/SrTiO3 interfaces. First-principles calculations reveal the competition between ionic polarization and electronic polarization in the polar layers in compensating the build-in polarization due to the polar discontinuity at the interface. In particular, a large ionic polarization is found in SmAlO3/SrTiO3 and GdAlO3/SrTiO3 systems (which experience the largest tensile epitaxial strain), hence reducing the amount of electrons transferred.
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