Journal
PROCEEDINGS OF THE 25TH BIENNIAL LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC)
Volume -, Issue -, Pages 55-58Publisher
IEEE
Keywords
Silicon carbide; Gate Turn-off Thyristor; Pulsed power; pulse-forming network; safe operating area
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Future Army pulsed power applications semiconductor devices that will meet requirements for high-power, low weight and volume, and fast switching speed. The following paper presents the pulsed power evaluation of high voltage silicon carbide (SiC) super gate turn-off (SGTO) thyristors. These devices are well suited for high voltage, high temperature pulsed power and continuous power electronic systems. A pulse-forming network (PFN) circuit and a low inductance, series resistor-capacitor (LRC) circuit were developed to evaluate both the fast dI/dt capability and the pulse safe operating area (SOA) of the SiC SGTO. Transient simulations of the high voltage SiC SGTOs were also performed on a narrow pulse LRC circuit to investigate the device's switching behavior under extreme pulsed conditions.
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