Journal
PROCEEDINGS OF THE 30TH ANNIVERSARY EUROSENSORS CONFERENCE - EUROSENSORS 2016
Volume 168, Issue -, Pages 84-88Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.proeng.2016.11.153
Keywords
enzyme-modified FET; ion-sensitive FET; ZnO-based FET; glucose sinsing
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Funding
- Grants-in-Aid for Scientific Research [16K04936] Funding Source: KAKEN
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Characteristics of an enzyme-modified field-effect transistor (EnFET) made of a ZnO-based ion-sensitive FET with immobilized glucose oxidase on the gate surface are studied for the application to healthcare chips. The EnFET was found to be able to detect reversibly and repeatedly the beta-D glucose in solution in the range of 0.2-40 mmol/L with an apparent Michaelis constant of 3.3 mmol/L, indicating the suitability for diabetic plasma glucose sensors. (C) 2016 The Authors. Published by Elsevier Ltd.
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