Journal
2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA)
Volume -, Issue -, Pages 210-214Publisher
IEEE
Keywords
silicon carbide; pulse width modulation; current starved delay; comparator; high temperature testing
Categories
Funding
- National Science Foundation Partners for Innovation [IIP1237816, EPS-1003970]
- Div Of Industrial Innovation & Partnersh
- Directorate For Engineering [1465243] Funding Source: National Science Foundation
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This paper describes the design of a SiC pulse width modulation (PWM) signal generator in the HiTSiC (R) CMOS process from Raytheon Systems Limited. The high-temperature applications of the circuit include motor control in heavy equipment, deep earth drilling, dc-dc voltage converters and power inverters. The results presented in this paper are for the PWM circuit operating with an input clock frequency of 100 kHz and a supply voltage range of 12 to 15 V. The building blocks for the PWM include a current-starved delay generator, a comparator and XNOR gates. The delay is controlled by a 6-bit binary input that allows the user to dynamically tune the duty cycle. Experimental results show the circuit to have a tunable duty cycle between 16.3% and 84.3% at 400 degrees C.
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