Design and Experimental Demonstration of 1.35 kV SiC Super Junction Schottky Diode

This paper presents the first functional SiC super junction devices, SiC SJ Schottky diodes, which substantially improve the trade-off between the breakdown voltage and specific on-resistance in SiC power devices. Processes for fabricating SJ structures by using a trench-etching-and-sidewall-implant method has been developed and a functional SJ Schottky diode has been demonstrated based on this processing method. The measured cell blocking voltage was 1350V, which achieves 95% of the simulated blocking voltage for the ideally-charge balanced SJ structure. The measured device specific on resistance was 0.92m Omega cm(2). The SJ drift region specific on resistance as low as 0.32 m Omega.cm(2) was obtained after subtracting the substrate resistance.