Journal
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
Volume 124, Issue 11, Pages 1185-1187Publisher
CERAMIC SOC JAPAN-NIPPON SERAMIKKUSU KYOKAI
DOI: 10.2109/jcersj2.16164
Keywords
Si2N2O; Film; Radiative cooling; Electrophoretic deposition
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In this study, Si2N2O particles intended for use as radiative cooling materials were synthesized by heat- treatment of mixtures of Si and SiO2 powders in an N-2 atmosphere at 1450 degrees C. The resulting Si2N2O particles were used as Si2N2O coatings on Al substrates as a radiative cooling device, and these coatings were generated using pulsed electrophoretic deposition. The average difference in temperature from the ambient temperature of the SSRM devices with the film thicknesses of 6.5, 13.2 and 35.2 mu m were -0.82, -0.44 and +0.83 degrees C, respectively. A radiative cooling effect was observed for the device with the film thicknesses of 6.5 and 13.2 mu m. (C) 2016 The Ceramic Society of Japan. All rights reserved.
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