Journal
IEEE MAGNETICS LETTERS
Volume 8, Issue -, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMAG.2016.2630667
Keywords
Spin electronics; magnetic tunnel junctions; electrical control of spin; magnetic random-access memory
Funding
- National Science Foundation Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS)
- Phase II NSF Small Business Innovation Research award
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We report experimental results on write error rate and read disturbance as a function of read/write pulse width and amplitude in electric-field-controlled magnetic tunnel junctions (MTJs). Results are shown for 50 nm perpendicular MTJs. We also design and simulate the performance of a 256 kilobit (Kbit) magneto-electric random-access memory (MeRAM) macro in a 28 nm complementary metal-oxide semiconductor (CMOS) process, based on the measured MTJ device data. The results show that existing electric-field-controlled MTJs are capable of delivering write error rates below 10(-9) for 10 ns total write and verify time and read disturbance below 10(-16) for 2 ns read time in a 256 Kbit MeRAM array.
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