Journal
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS
Volume 17, Issue 5, Pages 293-296Publisher
KOREAN INST ELECTRICAL & ELECTRONIC MATERIAL ENGINEERS
DOI: 10.4313/TEEM.2016.17.5.293
Keywords
InP; Capacitance; Interface states
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Funding
- Seoul National University of Science and Technology (Seoultech)
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Using capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/omega were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.
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