Journal
ENERGY TECHNOLOGY
Volume 5, Issue 10, Pages 1836-1843Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/ente.201700422
Keywords
copper iodide; hole-transporting layer; perovskites; solar cells; solid-gas reaction
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Funding
- Fundamental Research Funds for the Central Universities
- Swedish Foundation for Strategic Research (SSF)
- Swedish Energy Agency
- Knut and Alice Wallenberg Foundation
- National Natural Science Foundation of China [21507008, 91233201, 21606039, 51661135021]
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The inorganic p-type semiconductor CuI possesses several unique characteristics such as high transparency, low-production cost, high hole mobility, and good chemical stability and is a promising hole-transporting material candidate that can be explored in solar-cell devices. Herein, we adopt a simple solid-gas reaction method to fabricate a uniform CuI film by exposing a thermally evaporated copper film to iodine vapor and apply it as a hole-transporting layer (HTL) in inverted planar perovskite solar cells (PSCs). The optimized devices display a promising power conversion (PCE) efficiency of 14.7%, with an open-circuit voltage of 1.04 V, a short-circuit current density of 20.9 mW cm(-2), and a fill factor of 0.68. This is one of the highest PCE values reported so far for CuI-based HTL in PSCs. Moreover, the devices studied also exhibit good long-term stability at ambient atmosphere, arising from the hydrophobicity of CuI HTL. The results highlight that CuI fabricated using the simple and low-temperature processing method presented here holds great promise as low-cost alternative HTL material for the development of efficient and stable inverted planar PSCs in the future.
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