Binuclear Phthalocyanine Dimer-Containing Yttrium Double-Decker Ambipolar Semiconductor with Sensitive Response toward Oxidizing NO2 and Reducing NH3

A thin-film transistor fabricated from a binuclear phthalocyanine dimer-containing yttrium double-decker complex [{Pc(OC4H9)(8)}Y{BiPc(OC4H9)(12)}Y{Pc(OC4H9)(8)}] by using the quasiLangmuir-Shafer technique exhibits good ambipolar organic field-effect transistor (OFET) device performance with carrier mobilities of 2.3 and 0.8 cm(2) V-1 s(-1) for electrons and holes, respectively. These represent the highest mobilities achieved so far for solution-processed small-molecule single-component-based ambipolar OFET devices. The ambipolar semiconducting nature of this compound was further confirmed in an unambiguous manner by the high sensitive response of the device towards both oxidizing NO2 gas and reducing NH3 gas in the concentration range of approximately 0.5-3 ppm and 7.5-20 ppm, respectively, at room temperature.