Journal
ADVANCED MATERIALS INTERFACES
Volume 4, Issue 24, Pages -Publisher
WILEY
DOI: 10.1002/admi.201700950
Keywords
chemical vapor deposition; direct-write patterning; mask free; nanowires; zinc oxide
Funding
- U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02 06CH11357]
- NSF MRI program [1338021]
- Saint Louis University seed funds
- Iraqi Ministry of Higher Education and Scientific Research (MOHESR)
- University of Misan, College of Science, Misan, Iraq
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1338021] Funding Source: National Science Foundation
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Fabrication process that enables selective growth of vertically oriented zinc oxide (ZnO) nanowires (NWs) via chemical vapor deposition method and mask-free patterning approach is reported. It is shown that synthesis of high-quality ZnO nanowires in various architectures is achievable by optimizing the growth conditions and by precise patterning of catalytic ink precursors. Parallel direct-write patterning method is utilized to fabricate arrays of different architectures on Si/SiO2 substrates and directly on devices at preselected locations. The production of high-quality, crystalline ZnO NWs is demonstrated using aqueous iron catalytic inks. The composition of the ink and the lateral size of the patterns deposited on substrates are shown to affect the resulting nanowires and thus, allowing to control the geometry (length and diameter) of the individual ZnO NWs in the patterned assemblies. The results indicate that our protocols are tailored to the fabrication of ZnO NWs with specific surface geometries and interface functionalities for variety of targeted device applications.
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