Journal
ADVANCED MATERIALS INTERFACES
Volume 4, Issue 12, Pages -Publisher
WILEY
DOI: 10.1002/admi.201700260
Keywords
enhancement modes; III-V nanowires; metal-oxide nanoparticles; surface decoration; threshold voltage
Funding
- National Natural Science Foundation of China [51402160, 51672229, 61504151]
- Natural Science Foundation of Shandong Province, China [ZR2014EMQ011]
- General Research Fund [CityU 11204614]
- Theme-based Research Scheme of the Research Grants Council of Hong Kong SAR, China [T42-103/16-N]
- Science Technology and Innovation Committee of Shenzhen Municipality [JCYJ20160229165240684]
- Taishan Scholar Program of Shandong Province, China
Ask authors/readers for more resources
Recently, III-V semiconductor nanowires (NWs) are widely investigated as field-effect transistors (FETs) for high-performance electronics, optoelectronic, and others; nevertheless, effective control in their device performances, especially the threshold voltage is still not well attained, which can potentially limit their practical uses for technological applications. This study reports a simple but highly reliable metal-oxide nanoparticle (NP) surface decoration approach onto the device channel in order to manipulate electrical characteristics of III-V NWFETs, such as the threshold voltage and transistor operation, through the manipulation of free electrons in the NW channel (i.e., InAs, InP, and In0.7Ga0.3As) via depositing various metal-oxide NPs with different work functions. Without any passivation layer, this decoration approach can yield the stable NW device characteristics in ambient. Notably, the versatility of our decoration scheme has also been illustrated through the realization of high-performance enhancement-mode InAs NW-paralleled-arrayed devices as well as the configuration of highly efficient InAs NW NMOS inverters, comprising of both depletion and enhancement mode devices. All these results further elucidate the technological potential of this decoration approach for future high-performance, low-power nanoelectronic device fabrication, and circuit integration.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available