Journal
ACS PHOTONICS
Volume 4, Issue 3, Pages 482-488Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.6b00972
Keywords
photodetectors; mid-infrared photodetection; topological insulators; graphene; heterostructure; photogating effect
Categories
Funding
- National Research Foundation of Korea (NRF) through the government of Korea (MSIP) [NRF-2015R1A2A1A10052520, NRF-2016R1A4A1012929]
- Global Frontier Program [2014M3A6B3063709]
- Institute for Basic Science (IBS), Korea [IBS-R014-G1-2016-a00]
- Basic Science Research Program through the NRF - Ministry of Science, ICT & Future Planning [NRF-2015R1C1A1A02037430]
- Nation Research Foundation of Korea (NRF) through the government of Korea (MSIP) [NRF-2016R1A4A1012929]
- National Science Foundation of the USA [DMR-1308142, EFMA-1542798]
- Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4418]
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Broadband detection of mid-infrared (IR) photons extends to advanced optoelectronic applications such as imaging, sensing, and telecommunications. While graphene offers an attractive platform for broadband visible/IR photodetection, previous efforts to improve its responsivity, for example, by integrating light-absorbing colloids or waveguide or antenna fabrication, were achieved at the cost of reduced photon detection bandwidth. In this work, we demonstrate room-temperature operation of a novel mid-IR photodetector based on a graphene-Bi2Se3 heterostructure showing broadband detection and high responsivity (1.97 and 8.18 A/W at mid-and near-IR, respectively), in which simultaneous improvement of the spectral range and responsivity is achieved via exploiting broadband absorption of mid-1R and IR photons in a small-band-gap Bi2Se3 topological insulator and efficient hot carrier separation and strong photogating across the Bi2Se3/graphene interface. With sufficient room for further improvement by interface engineering, our results show a promising route to realize ultrabroadband, high-responsivity hot-carrier optoelectronics at room temperature.
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