Journal
ACS PHOTONICS
Volume 4, Issue 6, Pages 1431-1439Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.7b00184
Keywords
plasmonic nanolaser; epitaxial silver film; surface plasmon polariton; semiconductor nanolaser; telecom wavelength; low threshold
Categories
Funding
- Ministry of Science and Technology of Taiwan [MOST-104-2628-M-009-002-MY3, MOST-105-2119-M-009-014-MY3]
- AOARD [FA2386-16-1-4035]
- National Science Foundation [NSF-DMR-1306878, NSF-ECCS-1408302]
- Welch Foundation [F-1672]
- Center for Interdisciplinary Science of NCTU
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1306878] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1408302] Funding Source: National Science Foundation
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We report on the first demonstration of metal insulator semiconductor-type plasmonic lasers at the telecom wavelength (similar to 1.3 mu m) using top-down fabricated semiconductor waveguides on single-crystalline metallic platforms formed using epitaxially grown Ag films. The critical role of the Ag film thickness in sustaining. plasmonic lasing at the telecom wavelength is investigated systematically. Low-threshold (0.2 MW/cm(2)) and continuous-wave operation of plasmonic lasing at cryogenic temperatures can be achieved on a 150 nm Ag platform with minimum radiation leakage into the substrate. Plasmonic lasing occurs preferentially through higher-order surface-plasmon-polariton modes, which exhibit a higher mode confinement factor, lower propagation loss, and better field gain coupling. We observed plasmonic lasing up to 200 K under pulsed excitations. The plasmonic lasers on large-area epitaxial Ag films open up a scalable platform for on-chip integrations of plasmonics and optoelectronics at the telecom wavelength.
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