3.8 Proceedings Paper

Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices

Journal

Publisher

IEEE

Keywords

aluminum-doped zinc oxide; CIGS; degradation; transparent conductive oxide; photovoltaic cells

Funding

  1. DOE [DE-EE0007360]
  2. CWRU College of Arts and Sciences
  3. Ohio Third Frontier
  4. Wright Project [12-004]
  5. Swagelok Center for Surface Analysis of Materials (SCSAM)
  6. CWRU Summer Undergraduate Research in Energy and Sustainability (SURES) program

Ask authors/readers for more resources

Transparent conductive oxide (TCO) degradation is a known failure mode in thin-film photovoltaic (PV) devices through mechanisms such as resistivity increase and delamination. Here we apply thin interfacial modifiers to aluminum-doped zinc oxide (AZO) to mitigate damp heat induced degradation of electrical performance. Additionally, we demonstrate that these modifiers can be applied to the AZO front contact of a Cu(In, Ga)Se-2 device without significantly degrading the device performance, a promising step towards improving the lifetime performance.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

3.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available