Journal
NANO ENERGY
Volume 40, Issue -, Pages 289-299Publisher
ELSEVIER
DOI: 10.1016/j.nanoen.2017.08.025
Keywords
High-voltage diode; Triboelectric nanogenerator; Wearable electronics; Energy management; Flexible electronics; Transparent electronics
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Funding
- National Natural Science Foundation of China [11674405, 11675280, 11274366, 51272280, 61306011]
- Laboratory of Microfabrication in Institute of Physics, Chinese Academy of Sciences
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This work reports flexible fully transparent high-voltage diodes that feature high rectification ratio (R-r similar to 10(8)) and high breakdown voltage (V-b similar to 150 V) simultaneously, combined with their applications as building blocks of energy management systems in wearable electronics where triboelectric nanogenerators (TENGs) are used as power source. Both experimental results and technology computer aided design (TCAD) simulations suggest that Rr and Vb can be modulated by the offset length in an opposite tendency. The low reverse leakage current (similar to 10(-15) A/mu m) guarantees an ultra-low power consumption in standby mode, which is a core issue in wearable device applications. Besides the unprecedented electrical performance, the diodes exhibit good mechanical robustness with minimal degradation throughout the strain and fatigue tests. By incorporating these high-voltage diodes into half-wave and full-wave rectifier circuits, the high alternating current (AC) output voltage of TENGs is successfully rectified into direct current (DC) voltage and charged into supercapacitors (SCs), indicating their high integration and compatibility with TENGs, and thus their promising applications in various wearable electronic systems.
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